Characterization of thin p-on-p radiation detectors with active edges
- NázevTitle
- Characterization of thin p-on-p radiation detectors with active edgesCharacterization of thin p-on-p radiation detectors with active edges
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- T. Peltola, X. Wu, J. Kalliopuska, C. Granja, J. Jakůbek, M. Jakůbek, J. Harkonen, A. Gadda
- Klíčová slovaKeywords
- Silicon radiation detectors, Pixel sensors, Electrical characterization, Charge collection, TCAD simulations
- DOIDOI
- 10.1016/j.nima.2016.01.016
- Časopis / citaceJournal / citation
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 813, 139-146 (2016) · ISSN 0168-9002
- RokYear
- 2016
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Urychlovač Van de Graaff - laditelný zdroj monoenergetických neutronů a rychlých iontůVan de Graaff accelerator - tunable source of monoenergetic neutrons and fast ions; Van de Graaff - urychlovač iontů HV2500 jako laditelný zdroj neutronů v rámci české a evropské velké infrastrukturyAccelerator of ions HV2500 as tuneable neutron source in frame of Czech and European Large Infrastructure
- CitovánoCited by
- 3 (INSPIRE-HEP)
- Plný text (open access)Full text (open access)
- https://www.sciencedirect.com/science/article/pii/S016890021600019X
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Active edge p-on-p silicon pixel detectors with thickness of 100 mu m were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 mu m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.
Active edge p-on-p silicon pixel detectors with thickness of 100 mu m were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 mu m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.