Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip
- NázevTitle
- Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout ChipStudy of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- E. J. Schioppa, M. Idarraga, M. van Beuzekom, J. Visser, E. Koffeman, E. Heijne, K. J. Engel, J. Uher
- Klíčová slovaKeywords
- Medipix, Timepix, semiconductor detector, X-ray imaging, Charge sharing, diffusion
- DOIDOI
- 10.1109/TNS.2015.2475124
- Časopis / citaceJournal / citation
- IEEE Transactions on Nuclear Science 62(5), 2349-2359 (2015) · ISSN 0018-9499
- RokYear
- 2015
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Institucionální podpora na rozvoj výzkumné org.Institucionální podpora na rozvoj výzkumné org.; Spolupráce ČR s CERNCollaboration of the Czech Republic with CERN
- CitovánoCited by
- 15 (OpenAlex)
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse profile of the charge carriers cloud in the sensor as a function of the drift distance from the point of generation. The result does not rely on model assumptions or electric field calculations. The data are also used to validate numerical simulations and to predict the detector spectral response to an X-ray fluorescence spectrum for applications in X-ray imaging.
A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse profile of the charge carriers cloud in the sensor as a function of the drift distance from the point of generation. The result does not rely on model assumptions or electric field calculations. The data are also used to validate numerical simulations and to predict the detector spectral response to an X-ray fluorescence spectrum for applications in X-ray imaging.