Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons
- NázevTitle
- Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutronsDeep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- M. Ladziansky, A. Sagatova, F. Dubecky, V. Linhart, V. Necas
- Klíčová slovaKeywords
- semiconductor detector, radiation damage
- DOIDOI
- 10.1016/j.nima.2009.03.124
- Časopis / citaceJournal / citation
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 607(1), 135-137 (2009) · ISSN 0168-9002
- RokYear
- 2009
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Příprava, modifikace a charakterizace materiálů energetickým zářenímPreparation, Modification and Characterization of Materials by Energetic Radiation
- CitovánoCited by
- 19 (OpenAlex)
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Neutron detectors based on bulk semi-insulating (SI) GaAs represent an interesting and perspective solution due to its relatively high resistance against neutrons. Therefore SI GaAs material seems to be an excellent candidate for fabrication of a neutron imaging detector. Set of detectors based on SI GaAs material was bombarded with various integral neutron fluencies (10(11)-10(15) n cm(-2)). The performance of detectors was evaluated via measured spectra of Am-241 radionuclide sources. From the results a significant worsening in detection ability was observed at fluencies exceeding (over) similar to 10(13) n cm(-2). These observations are explained by lattice defects in the base SI GaAs material or in the overall detector structure (electrode interfaces, surface) introduced by neutrons. Photo-induced current transient spectroscopy was used to determine changes in deep level states of bulk SI GaAs base material.
Neutron detectors based on bulk semi-insulating (SI) GaAs represent an interesting and perspective solution due to its relatively high resistance against neutrons. Therefore SI GaAs material seems to be an excellent candidate for fabrication of a neutron imaging detector. Set of detectors based on SI GaAs material was bombarded with various integral neutron fluencies (10(11)-10(15) n cm(-2)). The performance of detectors was evaluated via measured spectra of Am-241 radionuclide sources. From the results a significant worsening in detection ability was observed at fluencies exceeding (over) similar to 10(13) n cm(-2). These observations are explained by lattice defects in the base SI GaAs material or in the overall detector structure (electrode interfaces, surface) introduced by neutrons. Photo-induced current transient spectroscopy was used to determine changes in deep level states of bulk SI GaAs base material.