3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance
- NázevTitle
- 3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- C. Da Via, E. Bolle, S. Pospíšil, T. Slavíček, V. Linhart
- Klíčová slovaKeywords
- semiconductor detector, radiation damage
- DOIDOI
- 10.1016/j.nima.2009.03.049
- Časopis / citaceJournal / citation
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 604(3), 505-511 (2009) · ISSN 0168-9002
- RokYear
- 2009
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Spolupráce ČR s CERNCollaboration of the Czech Republic with CERN
- CitovánoCited by
- 44 (INSPIRE-HEP)
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
3D detectors, with electrodes penetrating the entire silicon wafer and active edges, were fabricated at the Stanford Nano Fabrication Facility (SNF), California, USA, with different electrode configurations. After irradiation with neutrons up to a fluence of 8.8 x 10(15) n(eq)cm(-2), they were characterised using an infrared laser tuned to inject similar to 2 minimum ionising particles showing signal efficiencies as high as 66% for the configuration with the shortest (56 mu m) inter-electrode spacing. Sensors from the same wafer were also bump-bonded to the ATLAS FE-13 pixel readout chip and their noise characterised. Most probable signal-to-noise ratios were calculated before and after irradiation to be as good as 38:1 after the highest irradiation level with a substrate thickness of 210 mu m. These devices are promising candidates for application at the LHC such as the very forward detectors at ATLAS and CMS, the ATLAS B-Layer replacement and the general pixel upgrade.
3D detectors, with electrodes penetrating the entire silicon wafer and active edges, were fabricated at the Stanford Nano Fabrication Facility (SNF), California, USA, with different electrode configurations. After irradiation with neutrons up to a fluence of 8.8 x 10(15) n(eq)cm(-2), they were characterised using an infrared laser tuned to inject similar to 2 minimum ionising particles showing signal efficiencies as high as 66% for the configuration with the shortest (56 mu m) inter-electrode spacing. Sensors from the same wafer were also bump-bonded to the ATLAS FE-13 pixel readout chip and their noise characterised. Most probable signal-to-noise ratios were calculated before and after irradiation to be as good as 38:1 after the highest irradiation level with a substrate thickness of 210 mu m. These devices are promising candidates for application at the LHC such as the very forward detectors at ATLAS and CMS, the ATLAS B-Layer replacement and the general pixel upgrade.