CONSTRUCTION AND CHARACTERIZATION OF A 117-CM(2) SILICON PIXEL DETECTOR
- NázevTitle
- CONSTRUCTION AND CHARACTERIZATION OF A 117-CM(2) SILICON PIXEL DETECTORCONSTRUCTION AND CHARACTERIZATION OF A 117-CM(2) SILICON PIXEL DETECTOR
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- EHM. Heijne, F. Antinori, F. Barberis, S. Pospíšil
- Časopis / citaceJournal / citation
- IEEE Transactions on Nuclear Science. 1995, 1995(42), 413-418. ISSN 0018-9499.
- RokYear
- 1995
- JazykLanguage
- eng
- WoSWoS
- A1995RP81900041
- RIVRIV
- ProjektProject
- Fundamentální experimenty ve fyzice mikrosvětaFundamental Experiments in Physics of Microworld
AbstraktAbstract
t: A silicon pixel detector, developed in RD19, and consisting of 4 planes, similar to 30 cm(2) each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300 000 and each cell, 75 mu m x 500 mu m, contains a complete signal processing chain. Overall dead area is less than 3%.
t: A silicon pixel detector, developed in RD19, and consisting of 4 planes, similar to 30 cm(2) each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300 000 and each cell, 75 mu m x 500 mu m, contains a complete signal processing chain. Overall dead area is less than 3%.