Development of low-pressure vapour-phase epitaxial GaAs for medical imaging
- NázevTitle
- Development of low-pressure vapour-phase epitaxial GaAs for medical imagingDevelopment of low-pressure vapour-phase epitaxial GaAs for medical imaging
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- RL. Bates, S. Manolopoulos, K. Mathieson, S. Pospíšil
- DOIDOI
- 10.1016/S0168-9002(99)00403-9
- Časopis / citaceJournal / citation
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 434(1), 1-13 (1999) · ISSN 0168-9002
- RokYear
- 1999
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Fundamentální experimenty ve fyzice mikrosvětaFundamental Experiments in Physics of Microworld
- CitovánoCited by
- 13 (OpenAlex)
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Results from detailed alpha and low-energy proton spectroscopy are shown for diodes fabricated from this material. A charge collection efficiency of 100% was obtained when the diode could be depleted sufficiently. The concept of a charge collection depth was introduced, since a significant amount of charge was collected without bias. The minimum depth of such a region was shown to be 10.8 mu m at 0 V reverse bias, far greater than the 1.1 mu m predicted for the depletion depth. Charge coupling between the guard ring and the pad was observed and successfully modelled.
Results from detailed alpha and low-energy proton spectroscopy are shown for diodes fabricated from this material. A charge collection efficiency of 100% was obtained when the diode could be depleted sufficiently. The concept of a charge collection depth was introduced, since a significant amount of charge was collected without bias. The minimum depth of such a region was shown to be 10.8 mu m at 0 V reverse bias, far greater than the 1.1 mu m predicted for the depletion depth. Charge coupling between the guard ring and the pad was observed and successfully modelled.