Technology of GaAs detectors production
- NázevTitle
- Technology of GaAs detectors productionTechnology of GaAs detectors production
- Druh výsledkuResult type
- Příspěvek ve sborníkuProceedings paper
- AutořiAuthors
- V. Sopko, B. Sopko, D. Chren, J. Dammer, Z. Kohout
- Klíčová slovaKeywords
- GaAs, detector, TEES
- KonferenceConference
- APCOM 2010 (Mala Lucivna, 2010-06-16)
- Časopis / citaceJournal / citation
- In: APCOM 2010, Slovak University of Technology, 2010, pp. 228-231
- RokYear
- 2010
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Spolupráce ČR s CERNCollaboration of the Czech Republic with CERN; Fundamentální experimenty ve fyzice mikrosvětaFundamental Experiments in Physics of Microworld
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
For preparation of GaAs material with a high proton number are associated disadvantages such as considerable inhomogeneity of resistivity, complicated measuring baseline parameters of the material, relatively labor-intensive processing technology, the availability of these complex materials in the form of single crystals and in some cases only exist in the form of epitaxial layers.
For preparation of GaAs material with a high proton number are associated disadvantages such as considerable inhomogeneity of resistivity, complicated measuring baseline parameters of the material, relatively labor-intensive processing technology, the availability of these complex materials in the form of single crystals and in some cases only exist in the form of epitaxial layers.