Study of technological and radiation defects in silicon
- NázevTitle
- Study of technological and radiation defects in siliconStudy of technological and radiation defects in silicon
- Druh výsledkuResult type
- Příspěvek ve sborníkuProceedings paper
- AutořiAuthors
- S. Semenko, V. Sopko, B. Sopko, O. Semenko
- Časopis / citaceJournal / citation
- In: Silicon 2010. Rožnov pod Radhoštěm: TECON-Scientific, 2010. pp. 279-284. Prvni. ISBN 978-80-254-7361-0.
- JazykLanguage
- eng
- RIVRIV
- RIV/68407700:21220/10:00177086!RIV11-MSM-21220___
- ProjektProject
- Fundamentální experimenty ve fyzice mikrosvětaFundamental Experiments in Physics of Microworld
AbstraktAbstract
In this work we have examined the process of defect annealing of neutron transmutation phosphorus-doped n-type silicone (NTD) detector irradiated by neutrons. Radiation defects produced during irradiation of float zone silicon were characterized by means of DLTS. Band gap position, capture cross section of detected levels appearing during irradiation have been measured in order to identify the radiation centers. Obtained experimental results will be further utilized for optimization of the techniques and methods used in the production of silicon power devices, i.e. to the development of studies and experiments aimed on increasing the radiation hardness of silicon detectors used in nuclear accelerators.
In this work we have examined the process of defect annealing of neutron transmutation phosphorus-doped n-type silicone (NTD) detector irradiated by neutrons. Radiation defects produced during irradiation of float zone silicon were characterized by means of DLTS. Band gap position, capture cross section of detected levels appearing during irradiation have been measured in order to identify the radiation centers. Obtained experimental results will be further utilized for optimization of the techniques and methods used in the production of silicon power devices, i.e. to the development of studies and experiments aimed on increasing the radiation hardness of silicon detectors used in nuclear accelerators.