Ústav technické a experimentální fyziky Institute of Experimental and Applied Physics

Test beam results of 3D silicon pixel sensors for the ATLAS upgrade

NázevTitle
Test beam results of 3D silicon pixel sensors for the ATLAS upgradeTest beam results of 3D silicon pixel sensors for the ATLAS upgrade
Druh výsledkuResult type
Článek v časopiseJournal article
AutořiAuthors
P. G. Grenier, T. Slavíček, S. Pospíšil
DOIDOI
10.1016/j.nima.2011.01.181
Časopis / citaceJournal / citation
Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment. 2011, 638(1), 33-40. ISSN 0168-9002.
RokYear
2011
JazykLanguage
eng
WoSWoS
000290082600006
ScopusScopus
2-s2.0-79953329955
RIVRIV
RIV/68407700:21670/11:00187628!RIV12-MSM-21670___
ProjektProject
Mezinárodní experiment ATLAS-CERNInternational Experiment ATLAS-CERN; Spolupráce ČR s CERNCollaboration of the Czech Republic with CERN; Konstrukce 3D detektoru ionizujícího záření - voxelový detektorDesign of 3D detector of ionizing radiation - voxel detector

AbstraktAbstract

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS inner detector solenoid field. Sensors were bump-bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS inner detector solenoid field. Sensors were bump-bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.