ÚTEFČVUT Ústav technické a experimentální fyziky ČVUT v PrazeInstitute of Experimental and Applied Physics, CTU in Prague

Test beam results of 3D silicon pixel sensors for the ATLAS upgrade

NázevTitle
Test beam results of 3D silicon pixel sensors for the ATLAS upgradeTest beam results of 3D silicon pixel sensors for the ATLAS upgrade
Druh výsledkuResult type
Článek v časopiseJournal article
AutořiAuthors
P. G. Grenier, T. Slavíček, S. Pospíšil
Klíčová slovaKeywords
ATLAS upgrade, Silicon sensors, 3D sensors, radiation-hard detectors
ExperimentCollaboration
ATLAS 3D
DOIDOI
10.1016/j.nima.2011.01.181
Časopis / citaceJournal / citation
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 638(1), 33-40 (2011) · ISSN 0168-9002
RokYear
2011
JazykLanguage
eng
ZáznamyRecords
ProjektProject
Mezinárodní experiment ATLAS-CERNInternational Experiment ATLAS-CERN; Spolupráce ČR s CERNCollaboration of the Czech Republic with CERN; Konstrukce 3D detektoru ionizujícího záření - voxelový detektorDesign of 3D detector of ionizing radiation - voxel detector
CitovánoCited by
36 (INSPIRE-HEP)
2011: 42012: 102013: 82014: 52015: 22016: 22017: 02018: 02019: 02020: 02021: 12022: 12023: 02024: 12025: 2
Plný text (open access)Full text (open access)
https://arxiv.org/pdf/1101.4203
Citace ke staženíDownload citation
TXT · BibTeX

AbstraktAbstract

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS inner detector solenoid field. Sensors were bump-bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS inner detector solenoid field. Sensors were bump-bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

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