Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field
- NázevTitle
- Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic fieldTracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- H.G Gjersdal, E. B. Bolle, M. B. Borri, C. D. V. Da Via, T. Slavíček
- Klíčová slovaKeywords
- 3D pixels, Test beam, radiation hardness, High energy physics, Tracking efficiency, Charge sharing
- KonferenceConference
- 7th International 'Hiroshima' Symposium on the Development and Application of Semiconductor Tracking Detectors (Hiroshima, Japan, 2009-08-29)
- DOIDOI
- 10.1016/j.nima.2010.04.083
- Časopis / citaceJournal / citation
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 636(1), S42-S49 (2011) · ISSN 0168-9002
- RokYear
- 2011
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Spolupráce ČR s CERNCollaboration of the Czech Republic with CERN
- CitovánoCited by
- 1 (INSPIRE-HEP)
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the long pixel side, this resulting in a p-n inter-electrode distance of . Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15° angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.
A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the long pixel side, this resulting in a p-n inter-electrode distance of . Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15° angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.