Ústav technické a experimentální fyziky Institute of Experimental and Applied Physics

Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field

NázevTitle
Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic fieldTracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field
Druh výsledkuResult type
Článek v časopiseJournal article
AutořiAuthors
H.G Gjersdal, E. B. Bolle, M. B. Borri, C. D. V. Da Via, T. Slavíček
DOIDOI
10.1016/j.nima.2010.04.083
Časopis / citaceJournal / citation
Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment. 2011, 636(1), 42-49. ISSN 0168-9002.
RokYear
2011
JazykLanguage
eng
WoSWoS
000291416400008
ScopusScopus
2-s2.0-79955906651
RIVRIV
RIV/68407700:21670/11:00187730!RIV12-MSM-21670___
ProjektProject
Spolupráce ČR s CERNCollaboration of the Czech Republic with CERN

AbstraktAbstract

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the long pixel side, this resulting in a p-n inter-electrode distance of . Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15° angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the long pixel side, this resulting in a p-n inter-electrode distance of . Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15° angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.