Measurement of energy levels in a silicon detector damaged by neutrons
- NázevTitle
- Measurement of energy levels in a silicon detector damaged by neutronsMeasurement of energy levels in a silicon detector damaged by neutrons
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- V. Sopko, B. Sopko, J. Dammer, D. Chren
- Klíčová slovaKeywords
- Radiation damage to detector materials (solid state), Radiation damage evaluation methods
- KonferenceConference
- 13th International Workshop on Radiation Imaging Detectors (Villingen and Zurich, Switzerland, 2011-07-03)
- DOIDOI
- 10.1088/1748-0221/6/12/C12020
- Časopis / citaceJournal / citation
- Journal of Instrumentation 6(12), C12020-C12020 (2011) · ISSN 1748-0221
- RokYear
- 2011
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Fundamentální experimenty ve fyzice mikrosvětaFundamental Experiments in Physics of Microworld; Spolupráce ČR s CERNCollaboration of the Czech Republic with CERN
- CitovánoCited by
- 6 (OpenAlex)
- Plný text (open access)Full text (open access)
- https://iopscience.iop.org/article/10.1088/1748-0221/6/12/C12020/pdf
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
The level of defects in a semiconductor silicon detector diode made of high resistivity N type material and exposed to neutrons in a research nuclear reactor was examined by measuring the thermally stimulated current (TSC). A modified TSC method was employed where the released charge was measured in the reverse direction on a diode with zero bias voltage. Electrons captured in cooled traps due to the photoelectric effect are released when the material is heated. The detector was irradiated with an integral neutron flux of 7.63 × 1015 n/cm2.
The level of defects in a semiconductor silicon detector diode made of high resistivity N type material and exposed to neutrons in a research nuclear reactor was examined by measuring the thermally stimulated current (TSC). A modified TSC method was employed where the released charge was measured in the reverse direction on a diode with zero bias voltage. Electrons captured in cooled traps due to the photoelectric effect are released when the material is heated. The detector was irradiated with an integral neutron flux of 7.63 × 1015 n/cm2.