DLTS Measurement of Energetic Levels in Silicon Detector Damaged by Neutrons
- NázevTitle
- DLTS Measurement of Energetic Levels in Silicon Detector Damaged by NeutronsDLTS Measurement of Energetic Levels in Silicon Detector Damaged by Neutrons
- Druh výsledkuResult type
- Příspěvek ve sborníkuProceedings paper
- AutořiAuthors
- V. Sopko, B. Sopko, J. Dammer, D. Chren, J. Vlk, Z. Kohout
- Klíčová slovaKeywords
- DLTS Measurement, Silicon detector, Neutrons Damaged
- KonferenceConference
- Proceedings of the 17th International Conference on Applied Physics of Condensed Matter (Nový Smokovec, 2011-06-22)
- Časopis / citaceJournal / citation
- In: Proceedings of the 17th International Conference on Applied Physics of Condensed Matter, University of Žilina, 2011, pp. 236-239
- RokYear
- 2011
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Fundamentální experimenty ve fyzice mikrosvětaFundamental Experiments in Physics of Microworld
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
DLTS is one of several methods for detecting and characterizing deep levels in semiconductors. Its major strength is that it is spectroscopic, i.e. it gives a unique line or peak for each deep level detected, in a way which makes it quick and easy to relate the spectrum to the concentration and energy of each defect - at least in quantitative sense. Quantitative information is obtained from the spectra with a small amount of analysis and the signatures of common defects.
DLTS is one of several methods for detecting and characterizing deep levels in semiconductors. Its major strength is that it is spectroscopic, i.e. it gives a unique line or peak for each deep level detected, in a way which makes it quick and easy to relate the spectrum to the concentration and energy of each defect - at least in quantitative sense. Quantitative information is obtained from the spectra with a small amount of analysis and the signatures of common defects.