Simulation of a silicon neutron detector coated with TiB2 absorber
- NázevTitle
- Simulation of a silicon neutron detector coated with TiB2 absorberSimulation of a silicon neutron detector coated with TiB2 absorber
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- D. Krapohl, T. Slavíček, S. Pospíšil, C. Petersson
- Klíčová slovaKeywords
- Detector modelling and simulations, Solid state detectors, Neutron detectors (cold, thermal, fast neutrons)
- DOIDOI
- 10.1088/1748-0221/7/01/C01096
- Časopis / citaceJournal / citation
- Journal of Instrumentation 7(01), C01096-C01096 (2012) · ISSN 1748-0221
- RokYear
- 2012
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Spolupráce ČR s CERNCollaboration of the Czech Republic with CERN
- CitovánoCited by
- 1 (OpenAlex)
- Plný text (open access)Full text (open access)
- https://iopscience.iop.org/article/10.1088/1748-0221/7/01/C01096/pdf
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB2) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB2 converter layer and optimize the clean room process.
Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB2) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB2 converter layer and optimize the clean room process.