Processing and characterization of edgeless radiation detectors for large area detection
- NázevTitle
- Processing and characterization of edgeless radiation detectors for large area detectionProcessing and characterization of edgeless radiation detectors for large area detection
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- J. Kalliopuska, X. Wu, J. Jakůbek, S. Eranen, T. Virolainen
- Klíčová slovaKeywords
- Silicon detector, pixel detector, Active edge, Edgeless, Timepix
- KonferenceConference
- 6th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (Inawashiro, Japan, 2012-09-03)
- DOIDOI
- 10.1016/j.nima.2013.06.097
- Časopis / citaceJournal / citation
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 731, 205-209 (2013) · ISSN 0168-9002
- RokYear
- 2013
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Energetické a napjatostní aspekty kvazikřehkého lomu – důsledky pro určování lomově-mechanických parametrů silikátových kompozitůEnergetic and stress state aspects of quasi-brittle fracture – consequences for determination of fracture-mechanical parameters of silicate composites; Pracoviště pro nedestruktivní testování, diagnostiku a 3D zobrazování pomocí neutronové radiografie a tomografie (2011-2015, TA0/TA)Facility for nondestructive testing, diagnostics and 3D imaging based on neutron radiography and tomography.
- CitovánoCited by
- 5 (INSPIRE-HEP)
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to improved silicon processing capabilities. At VTT, we have recently triggered a multi-project wafer process of edgeless silicon detectors. Totally 80 pieces of 150 mm wafers were processed to provide a given number of detector variations. Fabricated detector thicknesses were 100, 200, 300 and 500 µm. The polarities of the fabricated detectors on the given thicknesses were n-in-n, p-in-n, n-in-p and p-in-p. On the n-in-n and n-in-p wafers the pixel isolation was made either with a common p-stop grid or with a shallow p-spray doping. The wafer materials were high resistivity Float Zone and Magnetic Czochralski silicon with crystal orientation of <100>. In this paper, the electric properties on various types of detectors are presented. The results from spectroscopic measurement show a good energy resolution of the edge pixels, indicating an excellent charge collection near the edge pixels of the edgeless detector.
The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to improved silicon processing capabilities. At VTT, we have recently triggered a multi-project wafer process of edgeless silicon detectors. Totally 80 pieces of 150 mm wafers were processed to provide a given number of detector variations. Fabricated detector thicknesses were 100, 200, 300 and 500 µm. The polarities of the fabricated detectors on the given thicknesses were n-in-n, p-in-n, n-in-p and p-in-p. On the n-in-n and n-in-p wafers the pixel isolation was made either with a common p-stop grid or with a shallow p-spray doping. The wafer materials were high resistivity Float Zone and Magnetic Czochralski silicon with crystal orientation of <100>. In this paper, the electric properties on various types of detectors are presented. The results from spectroscopic measurement show a good energy resolution of the edge pixels, indicating an excellent charge collection near the edge pixels of the edgeless detector.