How can chips live under radiation?
- NázevTitle
- How can chips live under radiation?How can chips live under radiation?
- Druh výsledkuResult type
- Příspěvek ve sborníkuProceedings paper
- AutořiAuthors
- E. H. M. Heijne
- Klíčová slovaKeywords
- CMOS chips, Large Hadron Collider, device geometries, Radiation effects, Single Event Effect
- KonferenceConference
- Nyquist AD Converters, Sensor Interfaces, and Robustness - Advances in Analog Circuit Design, 2012 (Valkenburg aan de Geul, 2012-03-27)
- DOIDOI
- 10.1007/978-1-4614-4587-6_11
- Časopis / citaceJournal / citation
- In: Nyquist AD Converters, Sensor Interfaces, and Robustness, Springer New York, 2013, pp. 203-221
- RokYear
- 2013
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Institucionální podpora na rozvoj výzkumné org.Institucionální podpora na rozvoj výzkumné org.; Mezinárodní experiment ATLAS-CERNInternational experiment ATLAS-CERN
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Interactions of different types of radiation in silicon are discussed together with effects on devices. Long-term irradiations cause 'Total Ionization-Dose' degradation and 'Single Event Effects' occur when dense ionization upsets a small area in a chip. At the CERN Large Hadron Collider LHC we expect a severe radiation environment, yet sophisticated chips are needed. Some remedies against radiation effects are illustrated. One can use changes in technology, in device geometry, in circuit design or in layout. At system level one can recover loss of functions or data. Trends in CMOS technology call for continuous study of behaviour of new devices under radiation. The increased use of chips for critical functions everywhere imposes study of rare effects of radiation, not only in extreme conditions. With large areas of silicon in operation worldwide, low probabilities do result in real incidents.
Interactions of different types of radiation in silicon are discussed together with effects on devices. Long-term irradiations cause 'Total Ionization-Dose' degradation and 'Single Event Effects' occur when dense ionization upsets a small area in a chip. At the CERN Large Hadron Collider LHC we expect a severe radiation environment, yet sophisticated chips are needed. Some remedies against radiation effects are illustrated. One can use changes in technology, in device geometry, in circuit design or in layout. At system level one can recover loss of functions or data. Trends in CMOS technology call for continuous study of behaviour of new devices under radiation. The increased use of chips for critical functions everywhere imposes study of rare effects of radiation, not only in extreme conditions. With large areas of silicon in operation worldwide, low probabilities do result in real incidents.