Measurement of radon progenies using the Timepix detector
- NázevTitle
- Measurement of radon progenies using the Timepix detectorMeasurement of radon progenies using the Timepix detector
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- B. Bulánek, K. Jílek, P. Čermák
- DOIDOI
- 10.1093/rpd/ncu077
- Časopis / citaceJournal / citation
- Radiation Protection Dosimetry. 2014, 160(1-3), 184-187. ISSN 0144-8420.
- RokYear
- 2014
- JazykLanguage
- eng
- WoSWoS
- 000339953000044
- ScopusScopus
- 2-s2.0-84904915532
- RIVRIV
- RIV/68407700:21670/14:00231343!RIV16-TA0-21670___
- ProjektProject
- Centrum rozvoje technologií pro jadernou a radiační bezpečnostRadiation and nuclear safety technologies development center
AbstraktAbstract
After an introduction of Timepix detector, results of these detectors with silicon and cadmium telluride detection layer in assessment of activity of short-lived radon decay products are presented. They were collected on an open-face filter by means of one-grab sampling method from the NRPI radon chamber. Activity of short-lived radon decay products was estimated from measured alpha decays of 218, 214Po. The results indicate very good agreement between the use of both Timepix detectors and an NRPI reference instrument, continuous monitor Fritra 4. Low-level detection limit for EEC was estimated to be 41 Bq m−3 for silicon detection layer and 184 Bq m−3 for CdTe detection layer, respectively.
After an introduction of Timepix detector, results of these detectors with silicon and cadmium telluride detection layer in assessment of activity of short-lived radon decay products are presented. They were collected on an open-face filter by means of one-grab sampling method from the NRPI radon chamber. Activity of short-lived radon decay products was estimated from measured alpha decays of 218, 214Po. The results indicate very good agreement between the use of both Timepix detectors and an NRPI reference instrument, continuous monitor Fritra 4. Low-level detection limit for EEC was estimated to be 41 Bq m−3 for silicon detection layer and 184 Bq m−3 for CdTe detection layer, respectively.