Ústav technické a experimentální fyziky Institute of Experimental and Applied Physics

Imaging performance of a Timepix detector based on semi-insulating GaAs

NázevTitle
Imaging performance of a Timepix detector based on semi-insulating GaAsImaging performance of a Timepix detector based on semi-insulating GaAs
Druh výsledkuResult type
Článek v časopiseJournal article
AutořiAuthors
B. Zat'ko, Z. Zaprazny, J. Jakubek, A. Sagatova, J. Žemlička, Y. Mora, M. Pichotka
DOIDOI
10.1088/1748-0221/13/01/C01034
Časopis / citaceJournal / citation
Journal of Instrumentation. 2018, 13 ISSN 1748-0221.
RokYear
2018
JazykLanguage
eng
WoSWoS
000423302400009
ScopusScopus
2-s2.0-85041830406
RIVRIV
RIV/68407700:21670/18:00319854!RIV19-MSM-21670___
ProjektProject
Urychlovač Van de Graaff - laditelný zdroj monoenergetických neutronů a lehkých iontůVan de Graaff Accelerator - a Tunable Source of Monoenergetic Neutrons and Light Ions

AbstraktAbstract

This work focused on a Timepix chip [1] coupled with a bulk semi-insulating GaAs sensor. The sensor consisted of a matrix of 256 x 256 pixels with a pitch of 55 mu m bump-bonded to a Timepix ASIC. The sensor was processed on a 350 mu m-thick SI GaAs wafer. We carried out detector adjustment to optimize its performance. This included threshold equalization with setting up parameters of the Timepix chip, such as Ikrum, Pream, Vfbk, and so on. The energy calibration of the GaAs Timepix detector was realized using a Am-241 radioisotope in two Timepix detector modes: time-over-threshold and threshold scan. An energy resolution of 4.4 keV in FWHM (Full Width at Half Maximum) was observed for 59.5 keV gamma-photons using threshold scan mode. The X-ray imaging quality of the GaAs Timepix detector was tested using various samples irradiated by an X-ray source with a focal spot size smaller than 8 gamma m and accelerating voltage up to 80 kV. A 700 gamma m x 700 mu m gold testing object (X-500-200-16Au with Siemens star) fabricated with high precision was used for the spatial resolution testing at different values of X-ray image magnification (up to 45). The measured spatial resolution of our X-ray imaging system was about 4 mu m.

This work focused on a Timepix chip [1] coupled with a bulk semi-insulating GaAs sensor. The sensor consisted of a matrix of 256 x 256 pixels with a pitch of 55 mu m bump-bonded to a Timepix ASIC. The sensor was processed on a 350 mu m-thick SI GaAs wafer. We carried out detector adjustment to optimize its performance. This included threshold equalization with setting up parameters of the Timepix chip, such as Ikrum, Pream, Vfbk, and so on. The energy calibration of the GaAs Timepix detector was realized using a Am-241 radioisotope in two Timepix detector modes: time-over-threshold and threshold scan. An energy resolution of 4.4 keV in FWHM (Full Width at Half Maximum) was observed for 59.5 keV gamma-photons using threshold scan mode. The X-ray imaging quality of the GaAs Timepix detector was tested using various samples irradiated by an X-ray source with a focal spot size smaller than 8 gamma m and accelerating voltage up to 80 kV. A 700 gamma m x 700 mu m gold testing object (X-500-200-16Au with Siemens star) fabricated with high precision was used for the spatial resolution testing at different values of X-ray image magnification (up to 45). The measured spatial resolution of our X-ray imaging system was about 4 mu m.