Single layer 3D tracking semiconductor detector

AbstraktAbstract

The invention relates to a pixel detector, comprising a semiconductor sensor layer, in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer connected to said semiconductor layer, said read-out electronics layer comprising an array of read-out circuits for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer. The neighboring read-out circuits are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighboring read-out circuits. The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighboring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.

The invention relates to a pixel detector, comprising a semiconductor sensor layer, in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer connected to said semiconductor layer, said read-out electronics layer comprising an array of read-out circuits for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer. The neighboring read-out circuits are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighboring read-out circuits. The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighboring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.