ÚTEFČVUT Ústav technické a experimentální fyziky ČVUT v PrazeInstitute of Experimental and Applied Physics, CTU in Prague

Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera

NázevTitle
Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation cameraPerformance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera
Druh výsledkuResult type
Příspěvek ve sborníkuProceedings paper
AutořiAuthors
D. Kubanda, B. Zat'ko, J. Žemlička, A. Sagatova
Klíčová slovaKeywords
SENSOR, Image sensors, Spatial resolution, Gallium arsenide, Lighting, Silicon
KonferenceConference
Advanced Semiconductor Devices and Microsystems. International Conference. 12th 2018. (ASDAM 2018) (Smolenice, 2018-10-21)
DOIDOI
10.1109/ASDAM.2018.8544509
Časopis / citaceJournal / citation
In: 2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), IEEE, 2018, pp. 1-4 · ISSN 2475-2916
RokYear
2018
JazykLanguage
eng
ZáznamyRecords
ProjektProject
Institucionální podpora na rozvoj výzkumné org.Institucionální podpora na rozvoj výzkumné org.
CitovánoCited by
1 (OpenAlex)
2024: 1
Citace ke staženíDownload citation
TXT · BibTeX

AbstraktAbstract

Prototype bulk semi-insulating GaAs sensors were connected to the Timepix readout chip and their performance was examined. Overall, three sensors with pixel pitch of 55 mu m, 165 mu m and 220 mu m were tested. Firstly, open beam illumination responses were obtained on which typical patterns of detection efficiency inhomogeneities appear, however, the patterns are, to large extend, removable by post processing corrections. Secondly, sensors were able to retrieve images of biological and technical samples of high quality with spatial resolution of 8.7 lp/mm (55 mu m pitch), 2.7 lp/mm (165 mu m pitch) and 2.0 lp/mm (220 mu m pitch). Also, 55 mu m, 165 mu m pitch sensors were able to perform spectrometric measurement. Energy resolution of 55 mu m pitch sensor is 5 % at 59.5 keV and 10% at 160.6 keV in case of 165 mu m pitch sensor.

Prototype bulk semi-insulating GaAs sensors were connected to the Timepix readout chip and their performance was examined. Overall, three sensors with pixel pitch of 55 mu m, 165 mu m and 220 mu m were tested. Firstly, open beam illumination responses were obtained on which typical patterns of detection efficiency inhomogeneities appear, however, the patterns are, to large extend, removable by post processing corrections. Secondly, sensors were able to retrieve images of biological and technical samples of high quality with spatial resolution of 8.7 lp/mm (55 mu m pitch), 2.7 lp/mm (165 mu m pitch) and 2.0 lp/mm (220 mu m pitch). Also, 55 mu m, 165 mu m pitch sensors were able to perform spectrometric measurement. Energy resolution of 55 mu m pitch sensor is 5 % at 59.5 keV and 10% at 160.6 keV in case of 165 mu m pitch sensor.

↑ NahoruTop