SiC based charged particle strip sensor spectrometer with neutron detection capability

AbstraktAbstract

Silicon carbide (SiC) devices have gained much attention owing to their superior characteristics that make them high-temperature and radiation-hard. The advantage of the SiC arises from its unique combination of electronic and physical properties such as a wide band-gap, high breakdown electric field strength, high saturated electron velocity, and high thermal conductivity. The wide band-gap results in a low intrinsic charge carrier concentration and a radiation hardness. The low intrinsic charge carrier concentration leads to low device leakages at high temperature. The high breakdown strength allows SiC devices to operate at much higher voltages. The aim of this publication is to present current status of a charged particle spectrometer based on a SiC strip detector. The sensor is made of a 4H-SiC (-SiC) hexagonal crystalline structure material which manifests good spectroscopic characteristics for charged particle detection similar to a standard silicon diode (20 keV FWHM with 5,4857MeV 241Am alpha particle). To obtain sensors for the charged particle detection out of the SiC bulk material we created Schottky contacts on the top and the Ohmic contact on the bottom. Preparation of the contacts will be discussed alongside the electric characterization of the sensor material. Results of the charged particle and the gamma detection and detection of thermal neutron detection (after a neutron converter deposition) will be presented. There will be also a discussion regarding fast neutron detection. The SiC sensor material was attached to a VATA GP8 based 128 strip readout to form the handheld spectrometer which will be demonstrated.

Silicon carbide (SiC) devices have gained much attention owing to their superior characteristics that make them high-temperature and radiation-hard. The advantage of the SiC arises from its unique combination of electronic and physical properties such as a wide band-gap, high breakdown electric field strength, high saturated electron velocity, and high thermal conductivity. The wide band-gap results in a low intrinsic charge carrier concentration and a radiation hardness. The low intrinsic charge carrier concentration leads to low device leakages at high temperature. The high breakdown strength allows SiC devices to operate at much higher voltages. The aim of this publication is to present current status of a charged particle spectrometer based on a SiC strip detector. The sensor is made of a 4H-SiC (-SiC) hexagonal crystalline structure material which manifests good spectroscopic characteristics for charged particle detection similar to a standard silicon diode (20 keV FWHM with 5,4857MeV 241Am alpha particle). To obtain sensors for the charged particle detection out of the SiC bulk material we created Schottky contacts on the top and the Ohmic contact on the bottom. Preparation of the contacts will be discussed alongside the electric characterization of the sensor material. Results of the charged particle and the gamma detection and detection of thermal neutron detection (after a neutron converter deposition) will be presented. There will be also a discussion regarding fast neutron detection. The SiC sensor material was attached to a VATA GP8 based 128 strip readout to form the handheld spectrometer which will be demonstrated.