ÚTEFČVUT Ústav technické a experimentální fyziky ČVUT v PrazeInstitute of Experimental and Applied Physics, CTU in Prague

Improved limits on beta+EC and ECEC processes in Se-74

NázevTitle
Improved limits on beta+EC and ECEC processes in Se-74Improved limits on beta+EC and ECEC processes in Se-74
Druh výsledkuResult type
Článek v časopiseJournal article
AutořiAuthors
A. Barabash, V. Brudanin, A. Klimenko, E. Rukhadze, I. Štekl
Klíčová slovaKeywords
double beta decay, double electron capture, Low background HPGe detector
DOIDOI
10.1016/j.nuclphysa.2020.121697
Časopis / citaceJournal / citation
Nuclear Physics A 996, 121697 (2020) · ISSN 0375-9474
RokYear
2020
JazykLanguage
eng
ZáznamyRecords
ProjektProject
Inženýrské aplikace fyziky mikrosvětaEngineering applications of microworld physics
CitovánoCited by
6 (INSPIRE-HEP)
2020: 42021: 12022: 1
Plný text (open access)Full text (open access)
https://arxiv.org/pdf/2001.07069
Citace ke staženíDownload citation
TXT · BibTeX

AbstraktAbstract

New limits on β+EC and ECEC processes in 74Se have been obtained using a 600 cm3 HPGe detector and an external source consisting of 1600 g of a natural selenium powder. For different β+EC and ECEC transitions (to the ground and excited states) obtained limits are on the level ∼(0.2−4.8)×1019 yr at 90\% C.L. In particular, for the potentially resonant transition into the 1204.2 keV excited state of 74Ge a lower half-life limit of 1.1×1019 yr at 90\% C.L. has been obtained. Possibility to increase the sensitivity of such measurements is discussed.

New limits on β+EC and ECEC processes in 74Se have been obtained using a 600 cm3 HPGe detector and an external source consisting of 1600 g of a natural selenium powder. For different β+EC and ECEC transitions (to the ground and excited states) obtained limits are on the level ∼(0.2−4.8)×1019 yr at 90\% C.L. In particular, for the potentially resonant transition into the 1204.2 keV excited state of 74Ge a lower half-life limit of 1.1×1019 yr at 90\% C.L. has been obtained. Possibility to increase the sensitivity of such measurements is discussed.

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