Modelling radiation damage to pixel sensors in the ATLAS detector
- NázevTitle
- Modelling radiation damage to pixel sensors in the ATLAS detectorModelling radiation damage to pixel sensors in the ATLAS detector
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- M. Aaboud, G. Aad, B. Abbott, D. C. Abbott, B. Ali, K. Augsten, B. Bergmann, D. Caforio, P. Gallus, M. Havránek, Z. Hubáček, M. Myška, R. Novotný, S. Pospíšil, K. Smolek, A. Sopczak, V. Vacek, P. Vokáč, V. Vrba
- Klíčová slovaKeywords
- Silicon detector, trapping time, simulation, radiation damage
- ExperimentCollaboration
- ATLAS
- DOIDOI
- 10.1088/1748-0221/14/06/P06012
- Časopis / citaceJournal / citation
- Journal of Instrumentation 14(06), P06012-P06012 (2019) · ISSN 1748-0221
- RokYear
- 2019
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Získávání nových poznatků o mikrosvětě v infrastruktuře CERNAcquiring new pieces of knowledge about micro-world in CERN research infrastructure; Výzkumná infrastruktura pro experimenty v CERNResearch Infrastructure for Experiments at CERN; Centrum pokročilých aplikovaných přírodních vědCenter for advanced applied sciences
- CitovánoCited by
- 58 (INSPIRE-HEP)
- Plný text (open access)Full text (open access)
- https://iopscience.iop.org/article/10.1088/1748-0221/14/06/P06012/pdf
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).