Detector response and performance of a 500 mu m thick GaAs attached to Timepix3 in relativistic particle beams
- NázevTitle
- Detector response and performance of a 500 mu m thick GaAs attached to Timepix3 in relativistic particle beamsDetector response and performance of a 500 mu m thick GaAs attached to Timepix3 in relativistic particle beams
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- B. Bergmann, P. Azzarello, P. Broulim, P. Burian, L. Meduna, S. Pospíšil, L. Tlustos
- Klíčová slovaKeywords
- Hybrid pixel detector, GaAs:Cr sensor, particle tracking, sensor cahracterization
- KonferenceConference
- 21st International Workshop on Radiation Imaging Detectors (2019-07-07)
- DOIDOI
- 10.1088/1748-0221/15/03/C03013
- Časopis / citaceJournal / citation
- Journal of Instrumentation 15(03), C03013-C03013 (2020) · ISSN 1748-0221
- RokYear
- 2020
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Inženýrské aplikace fyziky mikrosvětaEngineering applications of microworld physics; VdG II - Urychlovač Van de Graaff – laditelný zdroj monoenergetických neutronů a lehkých iontů - LM2015077 (2016–2019)VdG II - Urychlovač Van de Graaff – laditelný zdroj monoenergetických neutronů a lehkých iontů - LM2015077 (2016–2019)
- CitovánoCited by
- 8 (INSPIRE-HEP)
- Plný text (open access)Full text (open access)
- https://iopscience.iop.org/article/10.1088/1748-0221/15/03/C03013/pdf
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
The performance and response of a Timepix3 detector with a 500 mu m thick GaAs:Cr sensor layer was investigated in different radiation fields. The sensor resistivity was rho approximate to 10(9) Omega cm. Fitting different modified Hecht functions, which take the small pixel effect into account, the mobility-lifetime products of mu(e)tau(e) = (0.773 +/- 0.018 degrees) x 10-4 cm(2)V(-1) and mu(e)tau(e) = (0.996 +/- 0.056) x 10(-4) cm(2)V(-1) were determined. Hereby, the latter value is favored due to the better agreement of fit and data. In a measurement in a 40 GeV/c pion beam, the drift times and charge collection efficiencies were studied as a function of the interaction depth. We present the measured drift velocity as a function of the electric field strength and compare the determined dependence with a model. In a measurement in a mixed ion beam, we study the capability of the detector to separate different ion species. We show the detector response in the form of tracks and discuss heavy ion track features.
The performance and response of a Timepix3 detector with a 500 mu m thick GaAs:Cr sensor layer was investigated in different radiation fields. The sensor resistivity was rho approximate to 10(9) Omega cm. Fitting different modified Hecht functions, which take the small pixel effect into account, the mobility-lifetime products of mu(e)tau(e) = (0.773 +/- 0.018 degrees) x 10-4 cm(2)V(-1) and mu(e)tau(e) = (0.996 +/- 0.056) x 10(-4) cm(2)V(-1) were determined. Hereby, the latter value is favored due to the better agreement of fit and data. In a measurement in a 40 GeV/c pion beam, the drift times and charge collection efficiencies were studied as a function of the interaction depth. We present the measured drift velocity as a function of the electric field strength and compare the determined dependence with a model. In a measurement in a mixed ion beam, we study the capability of the detector to separate different ion species. We show the detector response in the form of tracks and discuss heavy ion track features.