A single layer 3D tracking semiconductor detector
- NázevTitle
- A single layer 3D tracking semiconductor detectorA single layer 3D tracking semiconductor detector
- Druh výsledkuResult type
- PatentPatent
- AutořiAuthors
- J. Jakůbek, M. Thilo, M. Campbell
- Časopis / citaceJournal / citation
- European Patent Office. Patent EP2758806. 2019-06-12.
- RokYear
- 2019
- JazykLanguage
- eng
- RIVRIV
- RIV/68407700:21670/19:00342165!RIV21-MSM-21670___
- ProjektProject
- Institucionální podpora na rozvoj výzkumné org.Institucionální podpora na rozvoj výzkumné org.
AbstraktAbstract
The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighbouring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.
The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighbouring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.