ÚTEFČVUT Ústav technické a experimentální fyziky ČVUT v PrazeInstitute of Experimental and Applied Physics, CTU in Prague

Study of the contrast resolution of Timepix detector with a semi-insulating GaAs sensor

NázevTitle
Study of the contrast resolution of Timepix detector with a semi-insulating GaAs sensorStudy of the contrast resolution of Timepix detector with a semi-insulating GaAs sensor
Druh výsledkuResult type
Článek v časopiseJournal article
AutořiAuthors
B. Zatko, A. Sagatova, Z. Zaprazny, P. Bohacek, M. Sekáčová, E. Kováčová, J. Žemlička, J. Jakůbek, D. Korytár, N. Gál, V. Nečas
Klíčová slovaKeywords
Image processing, Inspection with x-rays, X-ray detector, Solid state detectors
DOIDOI
10.1088/1748-0221/15/04/C04004
Časopis / citaceJournal / citation
Journal of Instrumentation 15(04), C04004-C04004 (2020) · ISSN 1748-0221
RokYear
2020
JazykLanguage
eng
ZáznamyRecords
ProjektProject
Inženýrské aplikace fyziky mikrosvětaEngineering applications of microworld physics
CitovánoCited by
3 (OpenAlex)
2021: 12022: 02023: 12024: 1
Plný text (open access)Full text (open access)
https://iopscience.iop.org/article/10.1088/1748-0221/15/04/C04004/pdf
Citace ke staženíDownload citation
TXT · BibTeX

AbstraktAbstract

This work reports on a prototype of a semi-insulating GaAs Timepix imaging detector. The statistical noise of the detector was investigated under uniform X-ray illumination and compared with theoretical predictions. The results show that the detector operated close to the theoretical predictions. Further investigations were done using an aluminum testing object fabricated by single point diamond nanomachining. The testing object consisted of several steps with different heights. With precise beam hardening corrections, we were able to determine the height of each step and the thickness of the testing object. The average error in the thickness determination was about 10.8 mu m. This corresponds to a relative value below 1% of the maximum thickness of the object.

This work reports on a prototype of a semi-insulating GaAs Timepix imaging detector. The statistical noise of the detector was investigated under uniform X-ray illumination and compared with theoretical predictions. The results show that the detector operated close to the theoretical predictions. Further investigations were done using an aluminum testing object fabricated by single point diamond nanomachining. The testing object consisted of several steps with different heights. With precise beam hardening corrections, we were able to determine the height of each step and the thickness of the testing object. The average error in the thickness determination was about 10.8 mu m. This corresponds to a relative value below 1% of the maximum thickness of the object.

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