Performance of silicon photomultipliers at low temperature
- NázevTitle
- Performance of silicon photomultipliers at low temperaturePerformance of silicon photomultipliers at low temperature
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- S. Nuruyev, G. Ahmadov, A. Sadigov, R. Akberov, M. Holík
- Klíčová slovaKeywords
- cryogenic detectors, s, photon detectors for UV, visible and IR photons, PIN diode, APD, Si-PMT, G-APD, CCDs, EBCCDs, EMCCDs, CMOS imagers
- KonferenceConference
- 21st International Workshop on Radiation Imaging Detectors (2019-07-07)
- DOIDOI
- 10.1088/1748-0221/15/03/C03003
- Časopis / citaceJournal / citation
- Journal of Instrumentation 15(03), C03003-C03003 (2020) · ISSN 1748-0221
- RokYear
- 2020
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Spolupráce ČR s SÚJV Dubna v teoretické a jaderné fyzice a při využití jaderných metod v dalších oborechCooperation of the Czech Republic with JINR Dubna in the theoretical and nuclear physics and application of nuclear methods in other fields
- CitovánoCited by
- 7 (INSPIRE-HEP)
- Plný text (open access)Full text (open access)
- https://iopscience.iop.org/article/10.1088/1748-0221/15/03/C03003/pdf
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
The performances of silicon photomultipliers with different structures are investigated at low temperature.The first sample is a micro pixel avalanche photodiode with deep buried pixel structure from Zecotek Photonics Inc. The second and third ones are multi-pixel photo counters with a surface pixel design from Hamamatsu Photonics. The influence of temperature on the main parameters of the photodiodes such as photon detection efficiency (PDE), gain, and capacitance was studied in the temperature range from 0 degrees C to -120 degrees C.
The performances of silicon photomultipliers with different structures are investigated at low temperature.The first sample is a micro pixel avalanche photodiode with deep buried pixel structure from Zecotek Photonics Inc. The second and third ones are multi-pixel photo counters with a surface pixel design from Hamamatsu Photonics. The influence of temperature on the main parameters of the photodiodes such as photon detection efficiency (PDE), gain, and capacitance was studied in the temperature range from 0 degrees C to -120 degrees C.