Improvement of parameters of micro-pixel avalanche photodiodes
- NázevTitle
- Improvement of parameters of micro-pixel avalanche photodiodesImprovement of parameters of micro-pixel avalanche photodiodes
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- A. Z. Sadigov, F. Ahmadov, Z. Y. Sadygov, G. S. Ahmadov, M. Holík
- DOIDOI
- 10.1088/1748-0221/17/07/P07021
- Časopis / citaceJournal / citation
- Journal of Instrumentation. 2022, 17(7), ISSN 1748-0221.
- RokYear
- 2022
- JazykLanguage
- eng
- WoSWoS
- 000867442500003
- ScopusScopus
- 2-s2.0-85134753358
- RIVRIV
- RIV/68407700:21670/22:00363576!RIV23-MSM-21670___
- ProjektProject
- Spolupráce ČR s SÚJV Dubna v teoretické a jaderné fyzice a při využití jaderných metod v dalších oborechCooperation of the Czech Republic with JINR Dubna in the theoretical and nuclear physics and application of nuclear methods in other fields
AbstraktAbstract
The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of collaboration with Zecotek Company. Measurements were carried out and discussed in terms of the important parameters such as the current-voltage and capacitance-voltage characteristic, gain, the temperature coefficient of breakdown voltage, breakdown voltage, and gamma-ray detection performance using an LFS scintillator. The obtained results showed that the newly developed MAPD-3NM photodiode outperformed the previous generation in most parameters and can be successfully applied in space application, medicine, high-energy physics, and security. New proposals are also discussed, for further improvement of the parameters of the MAPD photodiodes that will be produced in the coming years.
The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of collaboration with Zecotek Company. Measurements were carried out and discussed in terms of the important parameters such as the current-voltage and capacitance-voltage characteristic, gain, the temperature coefficient of breakdown voltage, breakdown voltage, and gamma-ray detection performance using an LFS scintillator. The obtained results showed that the newly developed MAPD-3NM photodiode outperformed the previous generation in most parameters and can be successfully applied in space application, medicine, high-energy physics, and security. New proposals are also discussed, for further improvement of the parameters of the MAPD photodiodes that will be produced in the coming years.