Investigation of parameters of new MAPD-3NM silicon photomultipliers
- NázevTitle
- Investigation of parameters of new MAPD-3NM silicon photomultipliersInvestigation of parameters of new MAPD-3NM silicon photomultipliers
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- F. Ahmadov, G. Ahmadov, R. Akbarov, A. Aktag, M. Holík, F. Mamedov, P. Přidal
- DOIDOI
- 10.1088/1748-0221/17/01/C01001
- Časopis / citaceJournal / citation
- Journal of Instrumentation. 2022, 17 ISSN 1748-0221.
- RokYear
- 2022
- JazykLanguage
- eng
- WoSWoS
- 000757419300012
- ScopusScopus
- 2-s2.0-85125520881
- RIVRIV
- RIV/68407700:21670/22:00363649!RIV23-MSM-21670___
- ProjektProject
- Inženýrské aplikace fyziky mikrosvětaEngineering applications of microworld physics
AbstraktAbstract
In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.
In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.