Calibrating p-i-n Diodes for Displacement Damage Monitoring in a Space Radiation Environment
- NázevTitle
- Calibrating p-i-n Diodes for Displacement Damage Monitoring in a Space Radiation EnvironmentCalibrating p-i-n Diodes for Displacement Damage Monitoring in a Space Radiation Environment
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- D. Bennett, V. Pan, J. Vohradsky, B. Bergmann, H. Cintas, P. Smolyanskiy, T. Slavíček, R. Sýkora, Z. Kohout
- Klíčová slovaKeywords
- proton, P-i-n diodes, neutron, electron, calibration, Radiation effects, solids, Silicon, Linear particle accelerator, SENSOR
- DOIDOI
- 10.1109/TNS.2025.3549051
- Časopis / citaceJournal / citation
- IEEE Transactions on Nuclear Science 72(4), 1159-1164 (2025) · ISSN 0018-9499
- RokYear
- 2025
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Identifikace částic v experimentech fysiky vysokych energií a ve vesmíru s pokročilými detekčními systémyParticle identification in high-energy physics experiments and space with advanced detection systems
- CitovánoCited by
- 3 (OpenAlex)
- Plný text (open access)Full text (open access)
- https://research.rug.nl/en/publications/0f653e56-af7c-4a99-b708-2acc9a031653
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
This work investigates the response of specially developed silicon p-i-n diodes with a long base as sensors to measure displacement damage dose (DDD) in silicon. Measurements of DDD are based on the forward voltage shift ( ΔVF ) of irradiated p-i-n diodes. In this work, the p-i-n diodes were irradiated in the following radiation fields: 1) 20-MeV electrons from a medical linear accelerator (LINAC); 2) 200-, 150-, and 100-MeV protons at the Groningen proton therapy facility; and 3) 4.63- and 15.3-MeV quasi-monoenergetic neutrons at the Czech Technical University, Prague. It was demonstrated that the calibration factor ( α ), which is the response of the p-i-n diode in terms of DDD obtained using 20-MeV electrons, can be used to predict the p-i-n diode response for protons and neutrons as mentioned above (within experimental error). However, the p-i-n diode response related to 100-MeV protons has a 70% higher response than predicted, which requires further investigation. Overall, the 20-MeV electrons from a medical LINAC were found to be suitable for p-i-n diodes calibration in terms of the non-ionizing energy losses (NIELs) and are widely available in contrast to 1-MeV electrons, fast neutrons, and protons.
This work investigates the response of specially developed silicon p-i-n diodes with a long base as sensors to measure displacement damage dose (DDD) in silicon. Measurements of DDD are based on the forward voltage shift ( ΔVF ) of irradiated p-i-n diodes. In this work, the p-i-n diodes were irradiated in the following radiation fields: 1) 20-MeV electrons from a medical linear accelerator (LINAC); 2) 200-, 150-, and 100-MeV protons at the Groningen proton therapy facility; and 3) 4.63- and 15.3-MeV quasi-monoenergetic neutrons at the Czech Technical University, Prague. It was demonstrated that the calibration factor ( α ), which is the response of the p-i-n diode in terms of DDD obtained using 20-MeV electrons, can be used to predict the p-i-n diode response for protons and neutrons as mentioned above (within experimental error). However, the p-i-n diode response related to 100-MeV protons has a 70% higher response than predicted, which requires further investigation. Overall, the 20-MeV electrons from a medical LINAC were found to be suitable for p-i-n diodes calibration in terms of the non-ionizing energy losses (NIELs) and are widely available in contrast to 1-MeV electrons, fast neutrons, and protons.