Investigation of the gamma radiation resistance of MAPD-3NK and MPPC-S12572-10P SiPMs
- NázevTitle
- Investigation of the gamma radiation resistance of MAPD-3NK and MPPC-S12572-10P SiPMsInvestigation of the gamma radiation resistance of MAPD-3NK and MPPC-S12572-10P SiPMs
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- F. Ahmadov, A. Mammadli, A. Sadygov, D. Berikov, M. Holík, F. Mamedov
- Klíčová slovaKeywords
- Gamma source, Micropixel avalanche photodiode, Plastic scintillator, SiPM
- DOIDOI
- 10.1016/j.radmeas.2025.107422
- Časopis / citaceJournal / citation
- Radiation Measurements 183, 107422 (2025) · ISSN 1350-4487
- RokYear
- 2025
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Institucionální podpora na rozvoj výzkumné org.Institucionální podpora na rozvoj výzkumné org.
- CitovánoCited by
- 5 (OpenAlex)
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
In this paper, we investigate the physical properties of the MPPC-S12572-10P and MAPD-3NK silicon photomultipliers (SiPMs) operating in Geiger mode with both deep-buried pixels and surface pixel structure under the influence of gamma radiation with an average energy of 1.25 MeV. Both types of photodiodes were irradiated with doses of 10 kGy, 40 kGy and 100 kGy. Changes in the dark current, capacitance, photosignal amplitude and operating voltage of the irradiated photodiodes were studied.
In this paper, we investigate the physical properties of the MPPC-S12572-10P and MAPD-3NK silicon photomultipliers (SiPMs) operating in Geiger mode with both deep-buried pixels and surface pixel structure under the influence of gamma radiation with an average energy of 1.25 MeV. Both types of photodiodes were irradiated with doses of 10 kGy, 40 kGy and 100 kGy. Changes in the dark current, capacitance, photosignal amplitude and operating voltage of the irradiated photodiodes were studied.