Probe and scanning system for 3D response mapping of pixelated semiconductor detector with X-rays and the timepix device
- NázevTitle
- Probe and scanning system for 3D response mapping of pixelated semiconductor detector with X-rays and the timepix deviceProbe and scanning system for 3D response mapping of pixelated semiconductor detector with X-rays and the timepix device
- Druh výsledkuResult type
- Ostatní výsledekOther result
- AutořiAuthors
- M. Jakůbek, J. Jakůbek, J. Žemlička
- Časopis / citaceJournal / citation
- [Functional Sample] 2011.
- RokYear
- 2011
- JazykLanguage
- eng
- RIVRIV
- RIV/68407700:21670/11:00191950!RIV12-MSM-21670___
- ProjektProject
- Příprava, modifikace a charakterizace materiálů energetickým zářenímPreparation, Modification and Characterization of Materials by Energetic Radiation; Využití radionuklidů a ionizujícího zářeníApplication of radionuclides and ionising radiation
AbstraktAbstract
The principle of this system is based on the use of a collimated parallel X-ray beam with a line profile, which delivers a defined charge at a specific location in 3D in the sensor. The beam can be sent onto the pixelated sensor at a low angle, which allows determining, for a given angle and detector position, the depth of interaction for each pixel. Shifting the detector along the axis perpendicular to the plane of the beam we can obtain a map of the detector response which is in 3D-i.e. both across the sensor plane and along its depth.
The principle of this system is based on the use of a collimated parallel X-ray beam with a line profile, which delivers a defined charge at a specific location in 3D in the sensor. The beam can be sent onto the pixelated sensor at a low angle, which allows determining, for a given angle and detector position, the depth of interaction for each pixel. Shifting the detector along the axis perpendicular to the plane of the beam we can obtain a map of the detector response which is in 3D-i.e. both across the sensor plane and along its depth.