Ústav technické a experimentální fyziky Institute of Experimental and Applied Physics

Detection of Soft X-rays with the Pixel Detector Timepix operated as a highly sensitive Dark-Current free CCD-like Camera

NázevTitle
Detection of Soft X-rays with the Pixel Detector Timepix operated as a highly sensitive Dark-Current free CCD-like CameraDetection of Soft X-rays with the Pixel Detector Timepix operated as a highly sensitive Dark-Current free CCD-like Camera
Druh výsledkuResult type
Příspěvek ve sborníkuProceedings paper
AutořiAuthors
F. Krejčí, M. Kroupa, J. Jakůbek, P. Brůža, D. Pánek
DOIDOI
10.1109/NSSMIC.2011.6154665
Časopis / citaceJournal / citation
In: IEEE Nuclear Science Symposium and Medical Imaging Conference 2011. Piscataway, New Jersey: Omnipress, 2011. pp. 1708-1712. ISSN 1082-3654. ISBN 978-1-4673-0118-3.
JazykLanguage
eng
WoSWoS
000304755601191
ScopusScopus
2-s2.0-84858652105
RIVRIV
RIV/68407700:21340/11:00193194!RIV13-MSM-21340___
ProjektProject
Využití radionuklidů a ionizujícího zářeníApplication of radionuclides and ionising radiation; Příprava, modifikace a charakterizace materiálů energetickým zářenímPreparation, Modification and Characterization of Materials by Energetic Radiation

AbstraktAbstract

The hybrid semiconductor pixel device Timepix consists of a sensor (e.g. silicon 300 um thick) bump-bonded to a pixelated ASIC readout chip (256 x 256 square pixels with pitch of 55 um). In the Time-over-Threshold mode (TOT) the detector enables the direct energy measurement in each pixel. The advantage of noiseless position sensitive detection combined with per pixel spectroscopic capability opens many new applications, which were till now, however, restricted to detection of radiation which is basically above the detector threshold (typically 4 keV). This limitation excludes application of the hybrid technology to highly interesting fields such as plasma diagnostics or X-ray microscopy. In this contribution we demonstrate how the Timepix detector working in TOT mode can be operated as a detector for soft X-ray photons with energy typically 0.5 keV (i.e. for particles which are in principle below the detector threshold). The approach is based on the detection of a larger number of photons incoming in the pixel read-out chain in a time significantly shorter than the shaping time of the pixel electronics. The proposed approach enables a CCD-Iike operation with many advantages of the hybrid counting technology (high sensitivity, dark-current free operation enhanced signal-to-noise ratio). Using the proposed approach we demonstrate single-shot soft X-ray imaging with a laser-induced plasma source and the characterization of the source itself.

The hybrid semiconductor pixel device Timepix consists of a sensor (e.g. silicon 300 um thick) bump-bonded to a pixelated ASIC readout chip (256 x 256 square pixels with pitch of 55 um). In the Time-over-Threshold mode (TOT) the detector enables the direct energy measurement in each pixel. The advantage of noiseless position sensitive detection combined with per pixel spectroscopic capability opens many new applications, which were till now, however, restricted to detection of radiation which is basically above the detector threshold (typically 4 keV). This limitation excludes application of the hybrid technology to highly interesting fields such as plasma diagnostics or X-ray microscopy. In this contribution we demonstrate how the Timepix detector working in TOT mode can be operated as a detector for soft X-ray photons with energy typically 0.5 keV (i.e. for particles which are in principle below the detector threshold). The approach is based on the detection of a larger number of photons incoming in the pixel read-out chain in a time significantly shorter than the shaping time of the pixel electronics. The proposed approach enables a CCD-Iike operation with many advantages of the hybrid counting technology (high sensitivity, dark-current free operation enhanced signal-to-noise ratio). Using the proposed approach we demonstrate single-shot soft X-ray imaging with a laser-induced plasma source and the characterization of the source itself.