Study of PIN Diode Energy Traps Created by Neutrons
- NázevTitle
- Study of PIN Diode Energy Traps Created by NeutronsStudy of PIN Diode Energy Traps Created by Neutrons
- Druh výsledkuResult type
- Příspěvek ve sborníkuProceedings paper
- AutořiAuthors
- V. Sopko, B. Sopko, D. Chren
- Klíčová slovaKeywords
- PIN diode, energy trap
- KonferenceConference
- Proceedings of IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society and 2012 6th IEEE International Conference on E-Learning in Industrial Electronics (ICELIE) (Montreal, 2012-10-25)
- Časopis / citaceJournal / citation
- In: Proceedings of IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society and 2012 6th IEEE International Conference on E-Learning in Industrial Electronics (ICELIE), IEEE, 2012, pp. 165 · ISSN 1553-572X
- RokYear
- 2012
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Experimentální ověření vlastností Schottkyho diody pro použití v dozimetrii.The experimental verifying of the properities of the Schottky diode for using in dosimetry.
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps. The results are compared with similar already published data obtained within RD50 collaboration.
Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps. The results are compared with similar already published data obtained within RD50 collaboration.