Dynamics of Charge Collection in Pixelated Semiconductor Sensor Studied with Heavy Ions and Timepix
- NázevTitle
- Dynamics of Charge Collection in Pixelated Semiconductor Sensor Studied with Heavy Ions and TimepixDynamics of Charge Collection in Pixelated Semiconductor Sensor Studied with Heavy Ions and Timepix
- Druh výsledkuResult type
- Příspěvek ve sborníkuProceedings paper
- AutořiAuthors
- P. Soukup, J. Jakůbek, M. Martišíková, M. Kroupa, S. Pospíšil
- DOIDOI
- 10.1109/nssmic.2012.6551955
- Časopis / citaceJournal / citation
- In: 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC). Piscataway: Institute of Electrical and Electronic Engineers, 2012. pp. 4184-4187. ISSN 1095-7863. ISBN 978-1-4673-2029-0.
- JazykLanguage
- eng
- WoSWoS
- 000326814204059
- ScopusScopus
- 2-s2.0-84878230803
- RIVRIV
- RIV/68407700:21670/12:00204235!RIV13-MSM-21670___
- ProjektProject
- Využití radionuklidů a ionizujícího zářeníApplication of radionuclides and ionising radiation; Pracoviště pro nedestruktivní testování, diagnostiku a 3D zobrazování pomocí neutronové radiografie a tomografie (2011-2015, TA0/TA)Facility for nondestructive testing, diagnostics and 3D imaging based on neutron radiography and tomography.
AbstraktAbstract
This paper presents a novel technique allowing for the measurement and visualization of the spatial distribution and time evolution of the charge collection process in semiconductor sensors of ionizing radiation. The study was carried out with a pixelated high resistivity silicon sensor bump-bonded to the Timepix readout chip (256 x 256 pixels, with pitch of 55 μm). The sensor was irradiated with energetic protons (132 MeV) and carbon ions (240MeV/u) entering the sensor at shallow angles. Such ions penetrate the full sensor thickness ionizing and depositing charge along their tracks. The charge deposited is collected by individual pixels of the Timepix chip operated in Time mode. The overall accuracy of these measurements was enhanced by averaging many particle tracks. The time accuracy is in order of nanoseconds and the position accuracy is about 5 μm. The purpose of this work is to demonstrate the accurate measurement that may be used with the mathematical model to investigate the electric field profile in a semiconductor sensor.
This paper presents a novel technique allowing for the measurement and visualization of the spatial distribution and time evolution of the charge collection process in semiconductor sensors of ionizing radiation. The study was carried out with a pixelated high resistivity silicon sensor bump-bonded to the Timepix readout chip (256 x 256 pixels, with pitch of 55 μm). The sensor was irradiated with energetic protons (132 MeV) and carbon ions (240MeV/u) entering the sensor at shallow angles. Such ions penetrate the full sensor thickness ionizing and depositing charge along their tracks. The charge deposited is collected by individual pixels of the Timepix chip operated in Time mode. The overall accuracy of these measurements was enhanced by averaging many particle tracks. The time accuracy is in order of nanoseconds and the position accuracy is about 5 μm. The purpose of this work is to demonstrate the accurate measurement that may be used with the mathematical model to investigate the electric field profile in a semiconductor sensor.