Influence of irradiation on defects creation in PIN diode structure
- NázevTitle
- Influence of irradiation on defects creation in PIN diode structureInfluence of irradiation on defects creation in PIN diode structure
- Druh výsledkuResult type
- Příspěvek ve sborníkuProceedings paper
- AutořiAuthors
- V. Sopko, B. Sopko, D. Chren, J. Dammer
- Klíčová slovaKeywords
- PIN diode, neutron flux, energy defects
- KonferenceConference
- Proceedings of 18th Internacional Conference on applied physics of condensed matter (Strbske pleso, 2012-06-20)
- Časopis / citaceJournal / citation
- In: Proceedings of 18th Internacional Conference on applied physics of condensed matter, Slovenská technická univerzita, 2012, pp. 67-70
- RokYear
- 2012
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Experimentální ověření vlastností Schottkyho diody pro použití v dozimetrii.The experimental verifying of the properities of the Schottky diode for using in dosimetry.; Selektivní detekce acetonu v lidském dechu - elektrochemický senzorSelective detection of acetone in human breath - electrochemical sensor; Mezinárodní experiment ATLAS-CERNInternational Experiment ATLAS-CERN
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Studies of radiation defects continue to be important and will find increasing application as the radiation doses expected to be measured by semiconductor detectors in future experiments will keep increasing to higher values. An endeavor to capture some of the changes associated with high radiation doses has been the basic motivation for the present work.
Studies of radiation defects continue to be important and will find increasing application as the radiation doses expected to be measured by semiconductor detectors in future experiments will keep increasing to higher values. An endeavor to capture some of the changes associated with high radiation doses has been the basic motivation for the present work.