Study of PIN diode energy traps created by neutrons
- NázevTitle
- Study of PIN diode energy traps created by neutronsStudy of PIN diode energy traps created by neutrons
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- V. Sopko, B. Sopko, D. Chren, J. Dammer
- Klíčová slovaKeywords
- Radiation damage to detector materials (solid state), Radiation damage to electronic
- DOIDOI
- 10.1088/1748-0221/8/03/C03014
- Časopis / citaceJournal / citation
- Journal of Instrumentation 8(03), C03014-C03014 (2013) · ISSN 1748-0221
- RokYear
- 2013
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Mezinárodní experiment ATLAS-CERNInternational Experiment ATLAS-CERN; Experimentální ověření vlastností Schottkyho diody pro použití v dozimetrii.The experimental verifying of the properities of the Schottky diode for using in dosimetry.; Selektivní detekce acetonu v lidském dechu - elektrochemický senzorSelective detection of acetone in human breath - electrochemical sensor
- CitovánoCited by
- 3 (OpenAlex)
- Plný text (open access)Full text (open access)
- https://iopscience.iop.org/article/10.1088/1748-0221/8/03/C03014/pdf
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.
Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.