Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation
- NázevTitle
- Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiationDevelopment of defects in the structure of PIN dosimetry diodes exposed to gamma radiation
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- V. Sopko, B. Sopko, D. Chren, J. Dammer
- Klíčová slovaKeywords
- Si PIN diode, Dosimetry, Gamma flux, energy trap, DLTS
- DOIDOI
- 10.1016/j.nima.2013.05.175
- Časopis / citaceJournal / citation
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 730, 146-148 (2013) · ISSN 0168-9002
- RokYear
- 2013
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Experimentální ověření vlastností Schottkyho diody pro použití v dozimetrii.The experimental verifying of the properities of the Schottky diode for using in dosimetry.; Selektivní detekce acetonu v lidském dechu - elektrochemický senzorSelective detection of acetone in human breath - electrochemical sensor; Mezinárodní experiment ATLAS-CERNInternational Experiment ATLAS-CERN
- CitovánoCited by
- 5 (OpenAlex)
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 EV1Gy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the close of gamma radiation. The results are compared with earlier published data.
Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 EV1Gy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the close of gamma radiation. The results are compared with earlier published data.