Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons
- NázevTitle
- Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protonsStudy of the development of defects in Si PIN diodes exposed to 23 GeV/c protons
- Druh výsledkuResult type
- Článek v časopiseJournal article
- AutořiAuthors
- V. Sopko, B. Sopko, D. Chren, J. Dammer, V. Píša
- Klíčová slovaKeywords
- Radiation damage evaluation methods, Radiation damage monitoring systems, Radiation damage to electronic components, Radiation damage to detector materials (solid state)
- DOIDOI
- 10.1088/1748-0221/10/03/P03021
- Časopis / citaceJournal / citation
- Journal of Instrumentation 10(03), P03021-P03021 (2015) · ISSN 1748-0221
- RokYear
- 2015
- JazykLanguage
- eng
- ZáznamyRecords
- ProjektProject
- Spolupráce ČR s CERNCollaboration of the Czech Republic with CERN; Experimentální ověření vlastností Schottkyho diody pro použití v dozimetrii.The experimental verifying of the properities of the Schottky diode for using in dosimetry.; Mezinárodní experiment ATLAS-CERNInternational Experiment ATLAS-CERN; Selektivní detekce acetonu v lidském dechu - elektrochemický senzorSelective detection of acetone in human breath - electrochemical sensor
- CitovánoCited by
- 1 (OpenAlex)
- Plný text (open access)Full text (open access)
- https://iopscience.iop.org/article/10.1088/1748-0221/10/03/P03021/pdf
- Citace ke staženíDownload citation
- TXT · BibTeX
AbstraktAbstract
Studying the development of crystallographic defects in PIN diodes is the focus of the RD-50 (CERN) research project. The study was carried out on Si PIN diodes manufactured and used in the Czech Republic. The Si PIN diodes were irradiated with 23 GeV/c protons at doses ranging from 0.5 to 43 Gy. The Si PIN diodes were calibrated in a 23 GeV/c proton source [1], and the energy traps of the defects produced were measured by the DLTS method. The IV characteristics and the parameters of the defects were studied. The 23 GeV/c protons produce typical crystallographic defects and, at higher doses, bring about their regrouping thus giving rise to a new generation of defects. Defects are classified by their energy levels in the forbidden band from the conduction band. The mechanism influencing the parameters of the defects is discussed. The study of defects in silicon is important for silicon-based electronic elements used in cosmic research because of their effects on the operability and reliability of electronic equipment installed in satellites. Another application is the dosimetry measurements involving various types of particle accelerators.
Studying the development of crystallographic defects in PIN diodes is the focus of the RD-50 (CERN) research project. The study was carried out on Si PIN diodes manufactured and used in the Czech Republic. The Si PIN diodes were irradiated with 23 GeV/c protons at doses ranging from 0.5 to 43 Gy. The Si PIN diodes were calibrated in a 23 GeV/c proton source [1], and the energy traps of the defects produced were measured by the DLTS method. The IV characteristics and the parameters of the defects were studied. The 23 GeV/c protons produce typical crystallographic defects and, at higher doses, bring about their regrouping thus giving rise to a new generation of defects. Defects are classified by their energy levels in the forbidden band from the conduction band. The mechanism influencing the parameters of the defects is discussed. The study of defects in silicon is important for silicon-based electronic elements used in cosmic research because of their effects on the operability and reliability of electronic equipment installed in satellites. Another application is the dosimetry measurements involving various types of particle accelerators.